Encapsulation parameters/Encapsulation: SOT-153
External dimensions/packaging: SOT-153
Other/maximum source drain voltage VdsDrain Source Voltage: JFET N-Channel
Other/Maximum Gate Source Voltage Vgs (±) Gate Source Voltage: 15V
Other/Maximum Drain Current IdDrain Current: -15V
Other/source drain on resistance RdsDrain Source On State Resistance: 50mA
Other/dissipative power PdPower Dissipation: 38ms@VDS=5V,VGS=0V,f=1kHz
Other/Specification PDF: __
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