Technical parameters/drain source resistance: 480 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 310 mW
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 640 mA
Encapsulation parameters/Encapsulation: SOT-323
External dimensions/packaging: SOT-323
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