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Model SI5513DC
Description SI5513DC Composite field-effect transistor 20V/-20V 3.1A-2.1A 1206-8/vs-8 marking/marking EB
Product QR code
Brand: Vishay Semiconductor
Packaging SOT-23-8
Delivery time
Packaging method
Standard packaging quantity 1
1.23  yuan 1.23yuan
5+:
$ 1.6578
25+:
$ 1.5350
50+:
$ 1.4490
100+:
$ 1.4122
500+:
$ 1.3876
2500+:
$ 1.3569
5000+:
$ 1.3447
10000+:
$ 1.3262
Quantity
5+
25+
50+
100+
500+
Price
$1.6578
$1.5350
$1.4490
$1.4122
$1.3876
Price $ 1.6578 $ 1.5350 $ 1.4490 $ 1.4122 $ 1.3876
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6700) Minimum order quantity(5)
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Technical parameters/drain source resistance: 75.0 mΩ

Technical parameters/polarity: N-Channel, P-Channel

Technical parameters/dissipated power: 1.10 W

Technical parameters/breakdown voltage of gate source: ±12.0 V

Technical parameters/Continuous drain current (Ids): 4.20 A

Encapsulation parameters/Encapsulation (metric): 3216

Encapsulation parameters/Encapsulation: SOT-23-8

External dimensions/length: 3.2 mm

External dimensions/width: 1.6 mm

Dimensions/Packaging (Metric): 3216

External dimensions/packaging: SOT-23-8

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