Technical parameters/drain source resistance: 2.70 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 250 mW
Technical parameters/breakdown voltage of gate source: ±6.00 V
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-563
External dimensions/packaging: SOT-563
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
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