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Model DM2G75SH6N
Description IGBT Modules, DAWIN Electronics DAWIN"s Insulated Gate Bipolar Transistor (IGBT) Modules offer superior electrical performance in a wide range of industry standards. IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. ### IGBT（Insulated Gate Bipolar Transistor (IGBT) is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.
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Brand: Dawin Electronics
Packaging 7DM-1
Delivery time
Packaging method
Standard packaging quantity 1
280.41  yuan 280.41yuan
1+:
$ 322.4692
10+:
$ 314.0570
50+:
$ 307.6076
100+:
$ 305.3643
200+:
$ 303.6819
500+:
$ 301.4386
1000+:
$ 300.0366
2000+:
$ 298.6345
Quantity
1+
10+
50+
100+
200+
Price
$322.4692
$314.0570
$307.6076
$305.3643
$303.6819
Price $ 322.4692 $ 314.0570 $ 307.6076 $ 305.3643 $ 303.6819
Start batch production 1+ 10+ 50+ 100+ 200+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4196) Minimum order quantity(1)
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Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -40 ℃

Technical parameters/dissipated power (Max): 300 W

Package parameters/number of pins: 7

Encapsulation parameters/Encapsulation: 7DM-1

External dimensions/length: 93 mm

External dimensions/width: 35 mm

External dimensions/height: 30 mm

External dimensions/packaging: 7DM-1

Compliant with standards/RoHS standards: RoHS Compliant

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