Technical parameters/drain source resistance: 20.0 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 200 mW
Technical parameters/drain source voltage (Vds): 16 V
Technical parameters/leakage source breakdown voltage: 16.0 V
Technical parameters/breakdown voltage of gate source: ±7.00 V
Technical parameters/Continuous drain current (Ids): 100 mA
Encapsulation parameters/Encapsulation: SC-75
External dimensions/packaging: SC-75
Other/Product Lifecycle: End of Life
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
|---|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review