Technical parameters/rated voltage (DC): 25.0 V
Technical parameters/rated current: 2.00 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 2.75 W
Technical parameters/gain bandwidth product: 240 MHz
Technical parameters/breakdown voltage (collector emitter): 25 V
Technical parameters/maximum allowable collector current: 2A
Technical parameters/minimum current amplification factor (hFE): 100 @1A, 2V
Technical parameters/rated power (Max): 2.75 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 2.75 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-223-8
External dimensions/length: 6.7 mm
External dimensions/width: 3.7 mm
External dimensions/height: 1.6 mm
External dimensions/packaging: SOT-223-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Diodes | 类似代替 |
TRANS 2NPN 25V 2A SM8
|
|||
ZDT649TC
|
Vishay Semiconductor | 类似代替 | SOT-223-8 |
TRANS 2NPN 25V 2A SM8
|
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