Technical parameters/power supply current: 350 µA
Technical parameters/number of circuits: 2
Technical parameters/number of channels: 2
Technical parameters/common mode rejection ratio: 97 dB
Technical parameters/Input compensation drift: 500 nV/K
Technical parameters/bandwidth: 1.00 MHz
Technical parameters/conversion rate: 400 mV/μs
Technical parameters/gain bandwidth product: 1 MHz
Technical parameters/input compensation voltage: 200 µV
Technical parameters/input bias current: 15 nA
Technical parameters/operating temperature (Max): 105 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/gain bandwidth: 97 dB
Technical parameters/Common Mode Rejection Ratio (Min): 97 dB
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 105℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
LT1013DD
|
National Semiconductor | 类似代替 |
TEXAS INSTRUMENTS LT1013DD 双运算放大器
|
|||
LT1013DDR
|
TI | 类似代替 | SOIC-8 |
TEXAS INSTRUMENTS LT1013DDR 芯片, 精密运算放大器, 2路
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review