Technical parameters/frequency: 0Hz ~ 1GHz
Technical parameters/power supply current: 160 mA
Technical parameters/number of channels: 2
Technical parameters/dissipated power: 1.21 W
Technical parameters/gain: 14.7 dB
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage: 5 V
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HMC754S8GE
|
Hittite | 完全替代 | SOIC-8 |
RF Amp Chip Dual GP 1GHz 5.5V 8Pin SOIC T/R
|
||
HMC754S8GE
|
ADI | 完全替代 | SOIC-8 |
RF Amp Chip Dual GP 1GHz 5.5V 8Pin SOIC T/R
|
||
HMC754S8GETR
|
Hittite | 完全替代 | SOIC-8 |
Ic Amp Mmic p-p 2CH Hbt 8soic
|
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