Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 9.20 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 170 W
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/leakage source breakdown voltage: 600 V
Technical parameters/Continuous drain current (Ids): 9.20 A
Technical parameters/rise time: 25.0 ns
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-262
External dimensions/packaging: TO-262
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF830ALPBF
|
International Rectifier | 功能相似 | TO-262 |
MOSFET N-CH 500V 5A TO262-3
|
||
IRF830ALPBF
|
Vishay Semiconductor | 功能相似 | TO-262 |
MOSFET N-CH 500V 5A TO262-3
|
||
IRF830ALPBF
|
VISHAY | 功能相似 | TO-262 |
MOSFET N-CH 500V 5A TO262-3
|
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