Technical parameters/drain source resistance: 0.4 Ω
Technical parameters/polarity: N
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 9.3A
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Other/Minimum Packaging: 50
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF630
|
Fairchild | 功能相似 | 3 |
STMICROELECTRONICS IRF630.. 晶体管, MOSFET, N沟道, 9 A, 200 V, 400 mohm, 10 V, 3 V
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Intersil | 功能相似 |
STMICROELECTRONICS IRF630.. 晶体管, MOSFET, N沟道, 9 A, 200 V, 400 mohm, 10 V, 3 V
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Comset Semiconductors | 功能相似 |
STMICROELECTRONICS IRF630.. 晶体管, MOSFET, N沟道, 9 A, 200 V, 400 mohm, 10 V, 3 V
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CJ | 功能相似 | TO-220-3 |
STMICROELECTRONICS IRF630.. 晶体管, MOSFET, N沟道, 9 A, 200 V, 400 mohm, 10 V, 3 V
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IRF630PBF
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International Rectifier | 功能相似 | Through Hole |
功率MOSFET Power MOSFET
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