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Technical parameters/drain source voltage (Vds): 80 V
Encapsulation parameters/Encapsulation: TO-263-2
External dimensions/packaging: TO-263-2
Other/Product Catalog: MOS(Field Effect Transistor
Other/continuous drain current (Id) (at 25 ° C): 200A
Other/leakage source voltage (Vdss): 80V
Other/gate source threshold voltage: 4V @ 250uA
Other/leakage source conduction resistance: 3.5 mΩ @ 100A,10V
Other/Type: N channel
Other/maximum power dissipation (Ta): 345W
Other/Product Code: C110332
Other/Packaging Specifications: TO-263-2
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