Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.8 W
Technical parameters/gain bandwidth product: 390 MHz
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 200 @100mA, 2V
Technical parameters/Maximum current amplification factor (hFE): 560
Technical parameters/rated power (Max): 800 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 800 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Other/Manufacturing Applications: Various drivers
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
212-6E
|
Ohmite | 功能相似 | Solder Lug |
Small Signal Bipolar Transistor
|
||
212-6E
|
Sanyo Semiconductor | 功能相似 |
Small Signal Bipolar Transistor
|
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