Technical parameters/rated voltage (DC): 500 V
Technical parameters/rated current: 30.0 A
Technical parameters/dissipated power: 329 W
Technical parameters/input capacitance: 2.83 nF
Technical parameters/gate charge: 72.0 nC
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Continuous drain current (Ids): 30.0 A
Technical parameters/rise time: 10 ns
Technical parameters/Input capacitance (Ciss): 2833pF @25V(Vds)
Technical parameters/descent time: 14 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 329W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
APT5016BFLLG
|
Microsemi | 完全替代 | TO-247-3 |
功率MOS 7 R FREDFET POWER MOS 7 R FREDFET
|
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