Technical parameters/frequency: 130 MHz
Technical parameters/dissipated power: 0.8 W
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/minimum current amplification factor (hFE): 120 @100mA, 1V
Technical parameters/rated power (Max): 800 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 800 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
D471
|
ON Semiconductor | 功能相似 | 135AR |
NPN Epitaxial Silicon Transistor, 2000-FNFLD
|
||
KSD471ACYTA
|
Fairchild | 完全替代 | TO-92-3 |
ON Semiconductor KSD471ACYTA , NPN 晶体管, 1 A, Vce=30 V, HFE:120, 1 MHz, 3引脚 TO-92封装
|
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