Technical parameters/dissipated power: 1 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4236
|
CDIL | 完全替代 |
NPN功率放大器硅晶体管 NPN POWER AMPLIFIER SILICON TRANSISTOR
|
|||
|
|
TT Electronics | 完全替代 |
NPN功率放大器硅晶体管 NPN POWER AMPLIFIER SILICON TRANSISTOR
|
|||
2N4236
|
TT Electronics/Optek Technology | 完全替代 |
NPN功率放大器硅晶体管 NPN POWER AMPLIFIER SILICON TRANSISTOR
|
|||
2N4236
|
NJS | 完全替代 |
NPN功率放大器硅晶体管 NPN POWER AMPLIFIER SILICON TRANSISTOR
|
|||
2N4236
|
TT Electronics/Welwyn | 完全替代 | TO-205 |
NPN功率放大器硅晶体管 NPN POWER AMPLIFIER SILICON TRANSISTOR
|
||
2N4236
|
ETC | 完全替代 |
NPN功率放大器硅晶体管 NPN POWER AMPLIFIER SILICON TRANSISTOR
|
|||
2N4236
|
Boca Semiconductor | 完全替代 | TO-39 |
NPN功率放大器硅晶体管 NPN POWER AMPLIFIER SILICON TRANSISTOR
|
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