Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 1.5A
Technical parameters/minimum current amplification factor (hFE): 30 @1A, 1.5V
Technical parameters/rated power (Max): 1 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-205
External dimensions/packaging: TO-205
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3762
|
Microsemi | 完全替代 | TO-39 |
PNP开关硅晶体管 PNP SWITCHING SILICON TRANSISTOR
|
||
|
|
Microsemi | 类似代替 | TO-5 |
PNP开关硅晶体管 PNP SWITCHING SILICON TRANSISTOR
|
||
JANTX2N3762L
|
Microchip | 类似代替 | TO-5-3 |
PNP开关硅晶体管 PNP SWITCHING SILICON TRANSISTOR
|
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