Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 40 V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-5
External dimensions/packaging: TO-5
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N697
|
New Jersey Semiconductor | 功能相似 |
Trans GP BJT NPN 40V 3Pin TO-5 Trans GP BJT NPN 40V 3Pin TO-5
|
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2N697
|
American Microsemiconductor | 功能相似 |
Trans GP BJT NPN 40V 3Pin TO-5 Trans GP BJT NPN 40V 3Pin TO-5
|
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