Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 100 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 0.2 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 70 @5mA, 5V
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/gain bandwidth: 170 MHz
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.9 mm
External dimensions/packaging: SOT-23-3
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCR108E6433HTMA1
|
Infineon | 完全替代 | SOT-23-3 |
双极晶体管 - 预偏置 NPN Silicon Digital TRANSISTOR
|
||
BCR108T
|
Infineon | 功能相似 | SC-75 |
NPN硅晶体管数字 NPN Silicon Digital Transistor
|
||
DTC123JKAT146
|
ROHM Semiconductor | 功能相似 | SOT-23-3 |
ROHM DTC123JKAT146 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率, SC-59
|
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