Technical parameters/power supply current: 2.3 mA
Technical parameters/number of circuits: 1
Technical parameters/gain bandwidth product: 4 MHz
Technical parameters/input compensation voltage: 5 mV
Technical parameters/input bias current: 50 pA
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): 0 ℃
Technical parameters/dissipated power (Max): 500 mW
Technical parameters/Common Mode Rejection Ratio (Min): 70 dB
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOP-8
External dimensions/packaging: SOP-8
Physical parameters/operating temperature: 0℃ ~ 70℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
LF351M
|
National Semiconductor | 类似代替 | SOIC-8 |
单路运算放大器( JFET ) Single Operational Amplifier (JFET)
|
||
|
|
ON Semiconductor | 类似代替 | SOP-8 |
单路运算放大器( JFET ) Single Operational Amplifier (JFET)
|
||
LF351M
|
Fairchild | 类似代替 | SOIC-8 |
单路运算放大器( JFET ) Single Operational Amplifier (JFET)
|
||
LF412ACN/NOPB
|
TI | 功能相似 | DIP-8 |
TEXAS INSTRUMENTS LF412ACN/NOPB 运算放大器, 双路, 3 MHz, 2个放大器, 15 V/µs, 10V 至 44V, DIP, 8 引脚
|
||
LF412ACN/NOPB
|
National Semiconductor | 功能相似 | DIP |
TEXAS INSTRUMENTS LF412ACN/NOPB 运算放大器, 双路, 3 MHz, 2个放大器, 15 V/µs, 10V 至 44V, DIP, 8 引脚
|
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