Technical parameters/forward current: 40 A
Technical parameters/forward voltage (Max): 1.19 V
Encapsulation parameters/installation method: Chassis
Other/Product Lifecycle: Active
Other/Packaging Methods: Each
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
NJS | 功能相似 | 2 |
Rectifier Diode, 1 Phase, 1Element, 40A, 200V V(RRM), Silicon, DO-203AB, DO-203AB, 1Pin
|
||
1N1186A
|
International Rectifier | 功能相似 | DO-5 |
Rectifier Diode, 1 Phase, 1Element, 40A, 200V V(RRM), Silicon, DO-203AB, DO-203AB, 1Pin
|
||
|
|
ETC2 | 功能相似 |
Rectifier Diode, 1 Phase, 1Element, 40A, 200V V(RRM), Silicon, DO-203AB, DO-203AB, 1Pin
|
|||
1N1186A
|
GeneSiC Semiconductor | 功能相似 | DO-203AB |
Rectifier Diode, 1 Phase, 1Element, 40A, 200V V(RRM), Silicon, DO-203AB, DO-203AB, 1Pin
|
||
|
|
Diotec Semiconductor | 功能相似 |
Rectifier Diode, 1 Phase, 1Element, 40A, 200V V(RRM), Silicon, DO-203AB, DO-203AB, 1Pin
|
|||
1N1186A
|
Vishay Semiconductor | 功能相似 | DO-5 |
Rectifier Diode, 1 Phase, 1Element, 40A, 200V V(RRM), Silicon, DO-203AB, DO-203AB, 1Pin
|
||
VS-1N1185A
|
Vishay Semiconductor | 功能相似 | DO-203AB |
Diode 150V 2Pin DO-5
|
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