Technical parameters/dissipated power: 40000 mW
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/minimum current amplification factor (hFE): 750 @2A, 3V
Technical parameters/rated power (Max): 40 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 40 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-126-3
External dimensions/length: 8 mm
External dimensions/width: 3.25 mm
External dimensions/height: 11 mm
External dimensions/packaging: TO-126-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6039G
|
ON Semiconductor | 类似代替 | TO-126-3 |
ON SEMICONDUCTOR 2N6039G 达林顿双极晶体管
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BD679AG
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ON Semiconductor | 类似代替 | TO-126-3 |
NPN 复合晶体管，On Semiconductor ### 标准 带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 通用晶体管 双 NPN 和 PNP 晶体管 功率晶体管 高电压晶体管 射频双极晶体管 低噪声，双匹配和复杂的双极晶体管
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BD679G
|
ON Semiconductor | 类似代替 | TO-126-3 |
塑料中功率NPN硅达林顿 Plastic Medium−Power Silicon NPN Darlingtons
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