Technical parameters/rated voltage (DC): 12.0 V
Technical parameters/rated current: 80.0 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 600 mW
Technical parameters/gain bandwidth product: 8000 MHz
Technical parameters/breakdown voltage (collector emitter): 12 V
Technical parameters/gain: 10dB ~ 13.5dB
Technical parameters/minimum current amplification factor (hFE): 30 @35mA, 8V
Technical parameters/rated power (Max): 600 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Technical parameters/dissipated power (Max): 600 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SMD-4
External dimensions/length: 2.54 mm
External dimensions/width: 2.54 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SMD-4
Physical parameters/operating temperature: -65℃ ~ 200℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AT-42010
|
AVAGO Technologies | 功能相似 | SMD-4 |
Trans RF BJT NPN 12V 0.08A 4Pin Case 100
|
||
AT-42010
|
Broadcom | 功能相似 | SMD-4 |
Trans RF BJT NPN 12V 0.08A 4Pin Case 100
|
||
T4-2
|
AVAGO Technologies | 功能相似 |
C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, HERMETIC SEALED, CERAMIC, MICROSTRIP PACKAGE-4
|
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