Technical parameters/frequency: 130 MHz
Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 1.00 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 0.8 W
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 120 @100mA, 1V
Technical parameters/Maximum current amplification factor (hFE): 400
Technical parameters/rated power (Max): 800 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 800 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-226-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSD471ACYBU
|
Fairchild | 类似代替 | TO-226-3 |
小信号 NPN 晶体管，高达 30V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
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KSD471ACYTA
|
Fairchild | 类似代替 | TO-92-3 |
ON Semiconductor KSD471ACYTA , NPN 晶体管, 1 A, Vce=30 V, HFE:120, 1 MHz, 3引脚 TO-92封装
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