Technical parameters/frequency: 1 kHz
Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 13 mA
Technical parameters/breakdown voltage: -30.0 V|30 V
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 350 mW
Technical parameters/breakdown voltage of gate source: 30.0 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 350 mW
Technical parameters/rated voltage: 30 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-226-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Central Semiconductor | 功能相似 |
RF Small Signal Field-Effect Transistor, 1Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-92
|
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