Technical parameters/rated voltage (DC): -60.0 V
Technical parameters/rated current: -25.0 A
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 200 W
Technical parameters/gain bandwidth product: 4 MHz
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 25A
Technical parameters/minimum current amplification factor (hFE): 35
Technical parameters/Maximum current amplification factor (hFE): 100
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Technical parameters/dissipated power (Max): 200000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-204-2
External dimensions/length: 39.37 mm
External dimensions/width: 26.67 mm
External dimensions/height: 8.51 mm
External dimensions/packaging: TO-204-2
Physical parameters/materials: Silicon
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tray
Other/Minimum Packaging: 100
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5883
|
ON Semiconductor | 功能相似 | TO-204-2 |
Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin,
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||
2N5883
|
Solitron Devices | 功能相似 |
Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin,
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2N5883
|
Microsemi | 功能相似 | TO-3 |
Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin,
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2N5883
|
ETC | 功能相似 |
Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin,
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2N5883
|
Motorola | 功能相似 |
Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin,
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BD249
|
Poinn | 功能相似 |
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BD249
|
Inchange Semiconductor | 功能相似 |
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Central Semiconductor | 功能相似 | TO-220 |
STMICROELECTRONICS D45H11 单晶体管 双极, PNP, -80 V, 50 W, -10 A, 120 hFE
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D45H11
|
Multicomp | 功能相似 | TO-220 |
STMICROELECTRONICS D45H11 单晶体管 双极, PNP, -80 V, 50 W, -10 A, 120 hFE
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D45H11
|
ON Semiconductor | 功能相似 | TO-220-3 |
STMICROELECTRONICS D45H11 单晶体管 双极, PNP, -80 V, 50 W, -10 A, 120 hFE
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D45H11
|
Motorola | 功能相似 |
STMICROELECTRONICS D45H11 单晶体管 双极, PNP, -80 V, 50 W, -10 A, 120 hFE
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D45H11
|
Rectron Semiconductor | 功能相似 | TO-220 |
STMICROELECTRONICS D45H11 单晶体管 双极, PNP, -80 V, 50 W, -10 A, 120 hFE
|
||
D45H11
|
Boca Semiconductor | 功能相似 |
STMICROELECTRONICS D45H11 单晶体管 双极, PNP, -80 V, 50 W, -10 A, 120 hFE
|
|||
|
|
Bourns J.W. Miller | 功能相似 | TO-220 |
NPN 复合晶体管,STMicroelectronics ### 双极晶体管,STMicroelectronics STMicroelectronics 的各种 NPN 和 PNP 双极性晶体管,包括通用、达林顿、功率和高电压设备,采用表面安装和通孔封装。
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||
TIP132
|
Multicomp | 功能相似 | TO-220 |
NPN 复合晶体管,STMicroelectronics ### 双极晶体管,STMicroelectronics STMicroelectronics 的各种 NPN 和 PNP 双极性晶体管,包括通用、达林顿、功率和高电压设备,采用表面安装和通孔封装。
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TIP132
|
ON Semiconductor | 功能相似 | TO-220-3 |
NPN 复合晶体管,STMicroelectronics ### 双极晶体管,STMicroelectronics STMicroelectronics 的各种 NPN 和 PNP 双极性晶体管,包括通用、达林顿、功率和高电压设备,采用表面安装和通孔封装。
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TIP132
|
ST Microelectronics | 功能相似 | TO-220-3 |
NPN 复合晶体管,STMicroelectronics ### 双极晶体管,STMicroelectronics STMicroelectronics 的各种 NPN 和 PNP 双极性晶体管,包括通用、达林顿、功率和高电压设备,采用表面安装和通孔封装。
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TIP132
|
Inchange Semiconductor | 功能相似 |
NPN 复合晶体管,STMicroelectronics ### 双极晶体管,STMicroelectronics STMicroelectronics 的各种 NPN 和 PNP 双极性晶体管,包括通用、达林顿、功率和高电压设备,采用表面安装和通孔封装。
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