Technical parameters/polarity: PNP
Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 170 @150mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 170 @150mA, 10V
Technical parameters/rated power (Max): 200 mW
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2PB1219AS
|
NXP | 功能相似 | SC-70 |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
|
||
2PB1219AS
|
Kexin | 功能相似 |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
|
|||
2PB1219AS,115
|
Philips | 完全替代 | SC-70 |
SC-70 PNP 50V 0.5A
|
||
2PB1219AS,115
|
NXP | 完全替代 | SOT-323-3 |
SC-70 PNP 50V 0.5A
|
||
2PB1219AS,115
|
Nexperia | 完全替代 | SOT-323-3 |
SC-70 PNP 50V 0.5A
|
||
2PB1219AS/T3
|
NXP | 功能相似 | SC-70 |
Semiconductors and Actives, pnp, Transistors, transistor, Discretes (diodes, transistors, thyristors ...)
|
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