Technical parameters/frequency: 160 MHz
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 1.5 W
Technical parameters/gain bandwidth product: 160 MHz
Technical parameters/breakdown voltage (collector emitter): 120 V
Technical parameters/maximum allowable collector current: 0.8A
Technical parameters/minimum current amplification factor (hFE): 120 @100mA, 5V
Technical parameters/rated power (Max): 1.5 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 1500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-89-3
External dimensions/packaging: SOT-89-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Zetex | 功能相似 | SOT-89 |
三极管(BJT) 2DA1201Y-7 SOT-89
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2DA1201Y-7
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Diodes | 功能相似 | SOT-89 |
三极管(BJT) 2DA1201Y-7 SOT-89
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KSA1201YTF
|
ON Semiconductor | 功能相似 | SOT-89 |
Trans GP BJT PNP 120V 0.8A 4Pin(3+Tab) SOT-89 T/R
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