Technical parameters/frequency: 450 MHz
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.25 W
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.025A
Technical parameters/minimum current amplification factor (hFE): 25 @4mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 25 @1mA, 10V
Technical parameters/rated power (Max): 250 mW
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BF824
|
Philips | 功能相似 | SOT-23 |
RF Small Signal Bipolar Transistor
|
||
BF824W,135
|
NXP | 功能相似 | SOT-323-3 |
SC-70 PNP 30V 0.025A
|
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