Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 1.5A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-126
External dimensions/packaging: TO-126
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Fairchild | 功能相似 |
PNP Epitaxial Silicon Transistor
|
|||
BD136-16
|
CDIL | 功能相似 |
PNP Epitaxial Silicon Transistor
|
|||
BD136-16
|
ST Microelectronics | 功能相似 | TO-126-3 |
PNP Epitaxial Silicon Transistor
|
||
BD136-16
|
UTC | 功能相似 |
PNP Epitaxial Silicon Transistor
|
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