Technical parameters/frequency: 100 MHz
Technical parameters/dissipated power: 0.25 W
Technical parameters/breakdown voltage (collector emitter): 32 V
Technical parameters/minimum current amplification factor (hFE): 180 @2mA, 5V
Technical parameters/rated power (Max): 250 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCW61B
|
Infineon | 功能相似 | SOT-23-3-3 |
Small Signal Bipolar Transistor
|
||
|
|
NXP | 功能相似 | SOT-23 |
Small Signal Bipolar Transistor
|
||
BCW61B
|
Nexperia | 功能相似 |
Small Signal Bipolar Transistor
|
|||
BCW61B
|
Diotec Semiconductor | 功能相似 |
Small Signal Bipolar Transistor
|
|||
BCW61B
|
Kexin | 功能相似 |
Small Signal Bipolar Transistor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review