Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 2V
Technical parameters/rated power (Max): 2 W
Technical parameters/dissipated power (Max): 2 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCP56-16
|
NXP | 功能相似 | SOT-223-4 |
NPN 晶体管，STMicroelectronics ### 双极晶体管，STMicroelectronics STMicroelectronics 的各种 NPN 和 PNP 双极性晶体管，包括通用、达林顿、功率和高电压设备，采用表面安装和通孔封装。
|
||
BCP56-16
|
ON Semiconductor | 功能相似 | SOT-223 |
NPN 晶体管，STMicroelectronics ### 双极晶体管，STMicroelectronics STMicroelectronics 的各种 NPN 和 PNP 双极性晶体管，包括通用、达林顿、功率和高电压设备，采用表面安装和通孔封装。
|
||
|
|
Diodes | 功能相似 | SOT-223 |
NPN 晶体管，STMicroelectronics ### 双极晶体管，STMicroelectronics STMicroelectronics 的各种 NPN 和 PNP 双极性晶体管，包括通用、达林顿、功率和高电压设备，采用表面安装和通孔封装。
|
||
BCP56-16
|
ST Microelectronics | 功能相似 | TO-261-4 |
NPN 晶体管，STMicroelectronics ### 双极晶体管，STMicroelectronics STMicroelectronics 的各种 NPN 和 PNP 双极性晶体管，包括通用、达林顿、功率和高电压设备，采用表面安装和通孔封装。
|
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