Technical parameters/frequency: 100 MHz
Technical parameters/rated voltage (DC): -30.0 V
Technical parameters/rated current: -100 mA
Technical parameters/number of pins: 3
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 150 mW
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 125 @2mA, 5V
Technical parameters/rated power (Max): 150 mW
Technical parameters/DC current gain (hFE): 125
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SC-70-3
External dimensions/packaging: SC-70-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC858ALT1G
|
Leshan Radio | 类似代替 |
ON SEMICONDUCTOR BC858ALT1G 单晶体管 双极, PNP, -30 V, 100 MHz, 225 mW, -100 mA, 90 hFE
|
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