Technical parameters/rated voltage (DC): 25.0 V
Technical parameters/rated current: 800 mA
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 25 V
Technical parameters/maximum allowable collector current: 0.8A
Technical parameters/minimum current amplification factor (hFE): 100 @100mA, 1V
Technical parameters/rated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC338-16
|
Micro Commercial Components | 功能相似 | TO-92 |
Transistor: NPN; bipolar; 25V; 800mA; 625mW; TO92
|
||
BC338-16
|
Siemens AG | 功能相似 |
Transistor: NPN; bipolar; 25V; 800mA; 625mW; TO92
|
|||
BC338-16
|
Diotec Semiconductor | 功能相似 | TO-92 |
Transistor: NPN; bipolar; 25V; 800mA; 625mW; TO92
|
||
|
|
ON Semiconductor | 完全替代 |
Trans GP BJT NPN 25V 0.8A 3Pin TO-92 Bulk
|
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