Technical parameters/rated voltage (DC): -60.0 V
Technical parameters/rated current: -1.00 A
Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 160 @100mA, 2V
Technical parameters/rated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC488BRL1
|
ON Semiconductor | 完全替代 | TO-226-3 |
大电流晶体管PNP硅 High Current Transistors PNP Silicon
|
||
BC490AZL1G
|
ON Semiconductor | 功能相似 | TO-226-3 |
TO-92 PNP 80V 1A
|
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