Technical parameters/rated current: 200 A
Technical parameters/forward voltage: 650mV @50mA
Technical parameters/dissipated power: 200 mW
Technical parameters/reverse recovery time: 5 ns
Technical parameters/forward current: 200 mA
Technical parameters/Maximum forward surge current (Ifsm): 4 A
Technical parameters/forward voltage (Max): 1 V
Technical parameters/forward current (Max): 200 mA
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/operating temperature: 125℃ (Max)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-35
External dimensions/length: 3.9 mm
External dimensions/width: 1.7 mm
External dimensions/height: 1.7 mm
External dimensions/packaging: DO-35
Physical parameters/operating temperature: 125 ℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BAT42
|
Taiwan Semiconductor | 功能相似 | DO-35 |
STMICROELECTRONICS BAT42 小信号肖特基二极管, 单, 30 V, 200 mA, 400 mV, 4 A, 125 °C
|
||
BAT42
|
Multicomp | 功能相似 | DO-35 |
STMICROELECTRONICS BAT42 小信号肖特基二极管, 单, 30 V, 200 mA, 400 mV, 4 A, 125 °C
|
||
BAT42
|
Vishay Semiconductor | 功能相似 | DO-35 |
STMICROELECTRONICS BAT42 小信号肖特基二极管, 单, 30 V, 200 mA, 400 mV, 4 A, 125 °C
|
||
|
|
VISHAY | 功能相似 | DO-204AH |
STMICROELECTRONICS BAT42 小信号肖特基二极管, 单, 30 V, 200 mA, 400 mV, 4 A, 125 °C
|
||
BAT42-GS08
|
Vishay Intertechnology | 功能相似 |
Schottky Diodes
|
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