Technical parameters/power supply voltage (DC): 10.0V (max)
Technical parameters/output current: 75 mA
Technical parameters/power supply current: 10 mA
Technical parameters/number of circuits: 1
Technical parameters/number of channels: 1
Technical parameters/number of pins: 8
Technical parameters/conversion rate: 4.58 kV/μs
Technical parameters/input compensation voltage: 3 mV
Technical parameters/input bias current: 3 µA
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/3dB bandwidth: 1.75 GHz
Technical parameters/gain bandwidth: 1.75 GHz
Technical parameters/power supply voltage: 3V ~ 10V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.45 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Each
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUF634U
|
TI | 类似代替 | SOIC-8 |
TEXAS INSTRUMENTS BUF634U. 芯片, 放大缓冲器, 高速
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review