Technical parameters/number of pins: 3
Technical parameters/forward voltage: 1V @15mA
Technical parameters/forward current: 70 mA
Technical parameters/Maximum forward surge current (Ifsm): 0.1 A
Technical parameters/forward voltage (Max): 1 V
Technical parameters/forward current (Max): 70 mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/operating temperature: 150℃ (Max)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: 150 ℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: industry
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BAS70-06W
|
Infineon | 完全替代 | SOT-323 |
肖特基势垒二极管，高达 120mA，Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
|
||
BAS70-06W
|
Philips | 完全替代 | SC-70 |
肖特基势垒二极管，高达 120mA，Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
|
||
BAS70-06W
|
Continental Device | 完全替代 |
肖特基势垒二极管，高达 120mA，Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
|
|||
BAS70-06W
|
Nexperia | 完全替代 | SC-70 |
肖特基势垒二极管，高达 120mA，Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
|
||
BAS70W-06-7-F
|
Diodes | 功能相似 | SOT-323-3 |
BAS70W-06-7-F 二极管, 70mA 70V 5ns, 3针 SOT-323封装
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review