Technical parameters/breakdown voltage: 75.0 V
Technical parameters/forward voltage: 1.25 V
Technical parameters/Maximum forward surge current (Ifsm): 4.5 A
Technical parameters/forward voltage (Max): 1.25 V
Technical parameters/forward current (Max): 250 mA
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/length: 2.9 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.9 mm
External dimensions/packaging: SOT-23
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Panjit | 类似代替 | SOT-23 |
Taiwan Semiconductor ### 二极管和整流器,Taiwan Semiconductor
|
||
BAS116
|
Nexperia | 类似代替 | SOT-23 |
Taiwan Semiconductor ### 二极管和整流器,Taiwan Semiconductor
|
||
BAS116
|
Multicomp | 类似代替 | SOT-23 |
Taiwan Semiconductor ### 二极管和整流器,Taiwan Semiconductor
|
||
|
|
Taitron | 类似代替 |
Taiwan Semiconductor ### 二极管和整流器,Taiwan Semiconductor
|
|||
BAS116
|
Infineon | 类似代替 | SOT-23 |
Taiwan Semiconductor ### 二极管和整流器,Taiwan Semiconductor
|
||
BAS116
|
Continental Device | 类似代替 |
Taiwan Semiconductor ### 二极管和整流器,Taiwan Semiconductor
|
|||
BAS116
|
ON Semiconductor | 类似代替 | SOT-23 |
Taiwan Semiconductor ### 二极管和整流器,Taiwan Semiconductor
|
||
BAS116-7-F
|
Multicomp | 功能相似 | SOT-23 |
二极管与整流器
|
||
BAS116T-7-F
|
Diodes | 功能相似 | SOT-523 |
BAS116T-7-F 二极管, 215mA 85V 3ns 硅结型, 3针 SOT-523封装
|
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