Technical parameters/forward voltage: 1.1 V
Technical parameters/dissipated power: 500 mW
Technical parameters/forward current: 100 mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: SOD-882
External dimensions/length: 1.02 mm
External dimensions/width: 0.62 mm
External dimensions/height: 0.5 mm
External dimensions/packaging: SOD-882
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BAP55LX
|
NXP | 类似代替 | SOD |
硅PIN二极管,高速开关的射频信号 Silicon PIN diode High speed switching for RF signals
|
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