Technical parameters/rise/fall time: 570ns, 430ns
Technical parameters/number of output interfaces: 2
Technical parameters/Static current: 200 µA
Technical parameters/descent time (Max): 430 ns
Technical parameters/rise time (Max): 570 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage: 9V ~ 14V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 125℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
LM5101BMA/NOPB
|
National Semiconductor | 完全替代 | SOIC-8 |
MOSFET & IGBT 驱动器,Texas Instruments
|
||
LM5101BMA/NOPB
|
TI | 完全替代 | SOIC-8 |
MOSFET & IGBT 驱动器,Texas Instruments
|
||
LM5101BMAX/NOPB
|
National Semiconductor | 完全替代 | SOIC-8 |
3A , 2A和1A高电压高侧和低侧栅极驱动器 3A, 2A and 1A High Voltage High-Side and Low-Side Gate Drivers
|
||
LM5101BMAX/NOPB
|
TI | 完全替代 | SOIC-8 |
3A , 2A和1A高电压高侧和低侧栅极驱动器 3A, 2A and 1A High Voltage High-Side and Low-Side Gate Drivers
|
||
MIC4101YM
|
Micrel | 功能相似 | SOIC-8 |
MICROCHIP MIC4101YM 芯片, 场效应管, MOSFET驱动器, 100V, 半桥, TTL, 8SOIC
|
||
MIC4101YM
|
Microchip | 功能相似 | SOIC-8 |
MICROCHIP MIC4101YM 芯片, 场效应管, MOSFET驱动器, 100V, 半桥, TTL, 8SOIC
|
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