Technical parameters/rated power: 200 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.0025 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 200 W
Technical parameters/threshold voltage: 1.4 V
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Continuous drain current (Ids): 180A
Technical parameters/rise time: 180 ns
Technical parameters/Input capacitance (Ciss): 5080pF @25V(Vds)
Technical parameters/descent time: 49 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 200W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/length: 10.67 mm
External dimensions/width: 4.83 mm
External dimensions/height: 9.65 mm
External dimensions/packaging: TO-262-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
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AUIRL1404Z
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N 通道功率 MOSFET，Infineon Infineon 的全面 AECQ-101 汽车资格单芯片 N 通道设备组合可满足许多应用中的多种电源要求。 该分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 N 通道设备，外形可应对几乎任何板布局和热设计挑战。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) ### MOSFET 晶体管，Infineon Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
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BUK794R1-40BT
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NXP | 功能相似 | TO-220 |
N沟道TrenchPLUS标准水平FET N-channel TrenchPLUS standard level FET
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STP200NF04
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ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 STripFET™，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
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