Technical parameters/drain source resistance: 26.5 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 92 W
Technical parameters/product series: AUIRF540Z
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Input capacitance (Ciss): 1770pF @25V(Vds)
Technical parameters/rated power (Max): 92 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.66 mm
External dimensions/height: 16.51 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF540Z
|
International Rectifier | 类似代替 | TO-220-3 |
TO-220AB N-CH 100V 36A
|
||
IRF540ZPBF
|
International Rectifier | 类似代替 | TO-220-3 |
INFINEON IRF540ZPBF 晶体管, MOSFET, 汽车, N沟道, 36 A, 100 V, 26.5 mohm, 10 V, 4 V
|
||
IRF540ZPBF
|
Infineon | 类似代替 | TO-220-3 |
INFINEON IRF540ZPBF 晶体管, MOSFET, 汽车, N沟道, 36 A, 100 V, 26.5 mohm, 10 V, 4 V
|
||
IRF540ZSPBF
|
Infineon | 功能相似 | TO-263-3 |
INFINEON IRF540ZSPBF 晶体管, MOSFET, N沟道, 36 A, 100 V, 26.5 mohm, 10 V, 4 V
|
||
IRF540ZSPBF
|
International Rectifier | 功能相似 | TO-263-3 |
INFINEON IRF540ZSPBF 晶体管, MOSFET, N沟道, 36 A, 100 V, 26.5 mohm, 10 V, 4 V
|
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