Technical parameters/power supply current: 2.3 mA
Technical parameters/number of circuits: 1
Technical parameters/number of channels: 1
Technical parameters/dissipated power: 500 mW
Technical parameters/common mode rejection ratio: 70 dB
Technical parameters/conversion rate: 13.0 V/μs
Technical parameters/gain bandwidth product: 4 MHz
Technical parameters/input compensation voltage: 5 mV
Technical parameters/input bias current: 50 pA
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): 0 ℃
Technical parameters/gain bandwidth: 4 MHz
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOP-8
External dimensions/length: 4.92 mm
External dimensions/width: 3.95 mm
External dimensions/height: 1.55 mm
External dimensions/packaging: SOP-8
Physical parameters/operating temperature: 0℃ ~ 70℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
LF351M
|
National Semiconductor | 类似代替 | SOIC-8 |
单路运算放大器（ JFET ） Single Operational Amplifier (JFET)
|
||
|
|
ON Semiconductor | 类似代替 | SOP-8 |
单路运算放大器（ JFET ） Single Operational Amplifier (JFET)
|
||
LF351M
|
Fairchild | 类似代替 | SOIC-8 |
单路运算放大器（ JFET ） Single Operational Amplifier (JFET)
|
||
LF412ACN/NOPB
|
TI | 功能相似 | DIP-8 |
TEXAS INSTRUMENTS LF412ACN/NOPB 运算放大器, 双路, 3 MHz, 2个放大器, 15 V/µs, 10V 至 44V, DIP, 8 引脚
|
||
LF412ACN/NOPB
|
National Semiconductor | 功能相似 | DIP |
TEXAS INSTRUMENTS LF412ACN/NOPB 运算放大器, 双路, 3 MHz, 2个放大器, 15 V/µs, 10V 至 44V, DIP, 8 引脚
|
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