Technical parameters/rated power: 190 W
Technical parameters/number of pins: 3
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 190 W
Technical parameters/breakdown voltage (collector emitter): 1200 V
Technical parameters/reverse recovery time: 200 ns
Technical parameters/rated power (Max): 190 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -40 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/length: 15.8 mm
External dimensions/width: 5 mm
External dimensions/height: 21 mm
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -40℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Other hard switching applications
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IGW25T120
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Infineon | 完全替代 | TO-247-3 |
IGBT 分立，Infineon **Infineon** 分散 IGBT 系列提供不同的技术，如 NPT、N 通道 TRENCHSTOPTM 和 Fieldstop。 它们可用于很多可能需要硬切换和软切换的应用。 这包括工业驱动器、UPS、逆变器、家用电器和感应烹饪。 有些设备可能具有防并联二极管或整体集成二极管。 ### IGBT 分立件和模块，Infineon 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。
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IRG4PC50WPBF
|
International Rectifier | 类似代替 | TO-247-3 |
INFINEON IRG4PC50WPBF 单晶体管, IGBT, 55 A, 2.3 V, 200 W, 600 V, TO-247AC, 3 引脚
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IRG4PC50WPBF
|
IFA | 类似代替 |
INFINEON IRG4PC50WPBF 单晶体管, IGBT, 55 A, 2.3 V, 200 W, 600 V, TO-247AC, 3 引脚
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