Technical parameters/drain source resistance: 0.038 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 694 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/Continuous drain current (Ids): 88A
Technical parameters/rise time: 22 ns
Technical parameters/Input capacitance (Ciss): 12000pF @25V(Vds)
Technical parameters/descent time: 4 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 694000 mW
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-227-4
External dimensions/packaging: SOT-227-4
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
APT50M38JLL
|
Microsemi | 类似代替 | SOT-227-4 |
功率MOS 7 R MOSFET POWER MOS 7 R MOSFET
|
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