Technical parameters/polarity: PNP
Technical parameters/dissipated power: 40000 mW
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 4A
Technical parameters/minimum current amplification factor (hFE): 750 @2A, 3V
Technical parameters/rated power (Max): 40 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 40000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-126-3
External dimensions/height: 11.2 mm
External dimensions/packaging: TO-126-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BD680AS
|
Freescale | 类似代替 | TO-126 |
FAIRCHILD SEMICONDUCTOR BD680AS 单晶体管 双极, PNP, -80 V, 14 W, -4 A, 750 hFE
|
||
BD680AS
|
Fairchild | 类似代替 | TO-126-3 |
FAIRCHILD SEMICONDUCTOR BD680AS 单晶体管 双极, PNP, -80 V, 14 W, -4 A, 750 hFE
|
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