Technical parameters/rated voltage (DC): -45.0 V
Technical parameters/rated current: -200 mA
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.4 W
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.2A
Technical parameters/minimum current amplification factor (hFE): 120 @50mA, 1V
Technical parameters/Maximum current amplification factor (hFE): 240
Technical parameters/rated power (Max): 400 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 4.7 mm
External dimensions/width: 3.93 mm
External dimensions/height: 4.7 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Box (TB)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSA539CYTA
|
ON Semiconductor | 类似代替 | TO-226-3 |
低频放大器 Low Frequency Amplifier
|
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