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Encapsulation parameters/Encapsulation: DFN
External dimensions/packaging: DFN
Other/Gate Voltage Vgs: ±12V
Other/Rds On (Max) @ Id, Vgs: 2.9mΩ@20A,10V
Other/continuous drain current Id: 85A
Other/drain source voltage Vds: 30V
Other/working temperature: -55°C~150°C
Other/Packaging/Shell: DFN 5x6
Other/FET types: N-Channel
Other/Pd - power dissipation (Max): 42W
Compliant with standards/RoHS standards: RoHS Compliant
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