Technical parameters/power supply current: 3 mA
Technical parameters/number of circuits: 2
Technical parameters/number of channels: 2
Technical parameters/common mode rejection ratio: 95.0 dB
Technical parameters/input capacitance: 15.0 pF
Technical parameters/conversion rate: 60.0 V/μs
Technical parameters/gain bandwidth product: 25 MHz
Technical parameters/input impedance: 1.00 TΩ
Technical parameters/input compensation voltage: 85 µV
Technical parameters/input bias current: 3 pA
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 125℃
Other/Product Lifecycle: End of Life
Other/Packaging Methods: Tape, Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Compliant with standards/military grade: No
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Rochester | 类似代替 | SOIC-8 |
精密,极低噪声,低输入偏置电流,宽带宽JFET运算放大器 Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifier
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